Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing
نویسندگان
چکیده
منابع مشابه
Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing
Channel temperature is a key parameter for accelerated life testing in GaN HEMTs. It is assumed that selfheating is similar in RF and DC operation and that DC test results can be applied to RF operation. We investigate whether this assumption is valid by using an experimentally calibrated, combined electrical and thermal model to simulate Joule heating during RF operation and compare this to DC...
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2015
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2015.09.025