Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

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Operating channel temperature in GaN HEMTs: DC versus RF accelerated life testing

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ژورنال

عنوان ژورنال: Microelectronics Reliability

سال: 2015

ISSN: 0026-2714

DOI: 10.1016/j.microrel.2015.09.025